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| (R) STGW30NB60HD N-CHANNEL 30A - 600V TO-247 PowerMESHTM IGBT T YPE STGW 30NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 30 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGE WITH TURBOSWITCHTM ANTIPARALLEL DIODE 1 2 3 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 20 60 30 240 190 1.52 -65 to 150 150 Unit V V V A A A W W /o C o o C C (*) Pulse width limited by safe operating area July 1999 1/8 STGW30NB60HD THERMAL DATA R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.66 30 0.1 C/W oC/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 250 2000 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 A IC = 30 A IC = 30 A Min. 3 2.2 1.8 Typ. Max. 5 2.8 Unit V V V Tj = 125 oC DYNAMIC Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 30 A f = 1 MHz V GE = 0 Min. Typ. 20 2300 250 60 150 15 72 120 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 30 A VGE = 15 V V clamp = 480 V T j = 150 o C R G =10 SWITCHING ON Symbol t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C I C = 30 A R G = 10 I C = 30 A V GE = 15 V Min. Typ. 15 35 1000 1000 Max. Unit ns ns A/s J 2/8 STGW30NB60HD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) tc t r (v off ) td (o ff ) tf E o ff(**) E ts(r) Parameter Test Conditions I C = 30 A V GE = 15 V Min. Typ. 150 40 210 90 1.10 2.0 250 70 250 160 1.6 2.65 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss I C = 30 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbol If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 30 A If = 30 A If = 30 A dI/dt = 100 A/S T j = 125 oC V R = 100 V o T j = 125 C 1.7 1.55 116 406 7 T est Conditions Min. T yp. Max. 30 240 2.0 Unit A A V V nS nC A (*) Pulse width limited by max. junction temperature (r) Include recovery losses on the STTA2006 freewheeling diode () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGW30NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGW30NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGW30NB60HD Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/8 STGW30NB60HD TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 7/8 STGW30NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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